Document Type

Article

Publication Date

2007

Abstract

In this paper we have studied the dynamic switching in magnetic random access memory (MRAM) and its dependence on thermal effects due to a finite temperature. The model is based on the Landau-Lifshitz-Gilbert equation and the stochastic Landau-Lifshitz-Gilbert equation which are numerically integrated. The magnetic layers are assumed to be ellipsoid shaped with each magnetic layer single domain. In addition, we have taken into account the uniaxial intrinsic anisotropy. Simulations were performed for both balanced and nonbalanced synthetic antiferromagnetic elements. The switching properties are discussed as a function of applied field pulses’ length and shape. In this paper we present how the thermal fluctuations affect the switching behavior, the reliability, and the writing speed of MRAM devices.

Journal Name

Journal of Applied Physics

Comments

Copyright 2007 American Institute of Physics.

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