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In this paper, we propose a method for a synthetic antiferromagnet structure’s critical curve determination. The method is based on reversible susceptibility’s singularities detection, as the magnetic field is swept along easy axis, in both positive and negative direction, while a hard axis bias field is also applied. By performing susceptibility measurements with different values of the bias field, the critical curve can be determined. Knowing the critical curve of a synthetic antiferromagnetic structure is essential for devices such as magnetic random access memories.

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Appl. Phys. Lett.

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Physics Commons