Event Title
Investigating the Surface Modification of In2O3 Nanocrystals for Enhanced Chemical Sensing
Faculty Mentor
Weilie Zhou
Location
Orchestra Room, Angelle Hall
Start Date
12-4-2014 10:45 AM
End Date
12-4-2014 11:45 AM
Description
In2O3, with a wide-band gap (3.6 eV), is an n-type semiconductive material, which has been extensively studied in the field of chemical sensors. Pt deposition on metal oxide gas sensors was found to increase the sensitivity of the device towards specific gases. Our work focuses on comparing the effects of physical and chemical methods of Pt deposition on In2O3 nanocrystal thin films, on the sensitivity of the fabricated chemical sensors. A one-step synthesis was used to attach the Pt nanoparticles on the In2O3 nanocrystals. Devices fabricated using unmodified, physically modified, and chemically modified In2O3 were compared under H2S atmosphere.
Investigating the Surface Modification of In2O3 Nanocrystals for Enhanced Chemical Sensing
Orchestra Room, Angelle Hall
In2O3, with a wide-band gap (3.6 eV), is an n-type semiconductive material, which has been extensively studied in the field of chemical sensors. Pt deposition on metal oxide gas sensors was found to increase the sensitivity of the device towards specific gases. Our work focuses on comparing the effects of physical and chemical methods of Pt deposition on In2O3 nanocrystal thin films, on the sensitivity of the fabricated chemical sensors. A one-step synthesis was used to attach the Pt nanoparticles on the In2O3 nanocrystals. Devices fabricated using unmodified, physically modified, and chemically modified In2O3 were compared under H2S atmosphere.