Document Type

Article

Publication Date

10-1-1988

Abstract

The reflectance of an absorbing substrate Rθ(ɸ) is considered as a function of the angle of incidence ϕ and an incident polarization parameter θ, where cos2θ and sin2θ give the power fractions of incident radiation that are p-and s-polarized, respectively. Taking GaAs as an example, we find that at certain wavelengths (e.g., 0.248 and 0.620 µm), the Rθ vs ɸ curve becomes oscillatory in a narrow range of θ > 45° with an unexpected secondary maximum appearing at oblique incidence. The extrema of the function Rθ(ɸ) are determined numerically, and their angular positions and reflectance levels are plotted vs θ for GaAs at photon energies of 1, 2, and 5 eV.

Journal Name

Applied Optics

Comments

This paper was published in Applied Optics and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-27-19-4034. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

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